Beilstein J. Nanotechnol.2016,7, 1783–1793, doi:10.3762/bjnano.7.171
sample in order to make RAS control possible.
Keywords: broad area semiconductor lasers (BAL); dry-etchmonitoring (RIE); precise etch depth control; reflectance anisotropy spectroscopy (RAS); III–V semiconductors; Introduction
Reflectance anisotropy/difference spectroscopy (RAS/RDS) [1][2][3][4][5] is
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Figure 1:
Color plot of the RAS signal during reactive ion etching (RIE) of a partially masked laser substrat...